Nitrogen incorporation into strained (In, Ga) (As, N) thin films grown on (100), (511), (411), (311), and (111) GaAs substrates studied by photoreflectance spectroscopy and high-resolution x-ray diffraction

Journal of Applied Physics

Volumn 100, Issue 9, 2006, Pages

  Ibanez J ^a   Kudrawiec, R ^b   Misiewicz, J ^b   Schmidbauer, M ^c   Henini, M ^d   Hopkinson, M ^e  

^a INSTITUTE OF EARTH SCIENCES JAUME ALMERA   (Spain)

^b WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^c LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^d UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^e UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; FILM GROWTH; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

CONDUCTION BAND; DEFORMATION POTENTIALS; PHOTOREFLECTANCE (PR); SUBSTRATE ORIENTATION;

SEMICONDUCTING FILMS;

EID: 33751120139     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2374669     Document Type: Article

References (26)

1. Semicond. Sci. Technol. 17(8) (2002)
2. special issue on dilute nitrides; J. Phys.: Condens. Matter 16(31) (2004)
3. S. Blanc, IEE Proc.: Optoelectron. 150, 64 (2003).
4. A. Arnoult, F. Gonzalez-Posada, S. Blanc, V. Bardinal, and C. Fontaine, Physica E (Amsterdam) 23, 352 (2004).
5. J. M. Sanchez, A. Guzman, J. M. Ulloa, A. Hierro, and E. Muoz, Appl. Phys. Lett. 84, 2524 (2004).
6. J. M. Sanchez, J. Cryst. Growth 270, 62 (2004).
7. C. Mailhiot and D. L. Smith, Phys. Rev. B 35, 1242 (1987).
8. W. Li, M. Pessa, and J. Likonen, Appl. Phys. Lett. 78, 2864 (2001).
9. W. J. Fan, S. F. Yoon, T. K. Ng, S. Z. Wang, W. K. Loke, R. Liu, and A. Wee, Appl. Phys. Lett. 80, 4136 (2002).
10. W. J. Fan, S. F. Yoon, W. K. Cheah, W. K. Loke, T. K. Ng, S. Z. Wang, R. Liu, and A. Wee, J. Cryst. Growth 268, 470 (2004).
11. J. F. Geisz, D. J. Friedman, J. M. Olson, S. R. Kurtz, and B. M. Keyes, J. Cryst. Growth 195, 401 (1998).
12. A. Y. Polyakov, Solid-State Electron. 46, 2147 (2002).
13. W. Shan, W. Walukiewicz, J. W. Ager III, E. E. Haller, J. F. Geisz, D. J. Friedman, J. M. Olson, and S. R. Kurtz, Phys. Rev. Lett. 82, 1221 (1999).
14. W. Shan, Phys. Status Solidi B 223, 75 (2001).
15. Y. Zhang, A. Mascarenhas, H. P. Xin, and C. W. Tu, Phys. Rev. B 61, 4433 (2000).
16. M. H. Ya, Y. F. Chen, and Y. S. Huang, J. Appl. Phys. 92, 1446 (2002).
17. J. Misiewicz, P. Sitarek, G. Sek, and R. Kudrawiec, Mater. Sci. 21, 263 (2003).
18. J. Hornstra and W. J. Bartels, J. Cryst. Growth 44, 513 (1978).
19. I. Vurgaftman, J. R. Meter, and L. R. Ram-Mohan, J. Appl. Phys. 89, 5815 (2001).
20. I. Vurgaftman and J. R. Meter, J. Appl. Phys. 94, 3675 (2003).
21. S. Adachi, J. Appl. Phys. 53, 8775 (1982).
22. D. E. Aspnes, Surf. Sci. 37, 418 (1973).
23. F. H. Pollak, in Modulation Spectroscopy of Semiconductors and Semiconductor Microstructures, Handbook on Semiconductors Vol. 2, edited by, T. S. Moss, (Elsevier Science, Amsterdam, 1994), pp. 527-635.
24. F. H. Pollak and M. Cardona, Phys. Rev. 172, 816 (1968).
25. H. Asai and K. Oe, J. Appl. Phys. 54, 2052 (1983).
26. K. Yang, T. Anan, and L. J. Schowalter, Appl. Phys. Lett. 65, 2789 (1994).