Reactive ion etching of silicon carbide with patterned boron implantation

Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 925-928

  Vassilevski, K V ^a   Hedley, J ^a   Horsfall, A B ^a   Johnson, C M ^b   Wright, N G ^a  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Boron Implantation; Etch Rate; Reactive Ion Etching; Silicon Carbide

Indexed keywords

ANNEALING; BORON; CONCENTRATION (PROCESS); DOPING (ADDITIVES); ETCHING; ION IMPLANTATION; PLASMAS; SILICON CARBIDE;

BORON IMPLANTATION; ELECTRICAL ACTIVATION; ETCH RATE; RESIDUAL LATTICES;

REACTIVE ION ETCHING;

EID: 8644286752     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.925     Document Type: Conference Paper

References (3)

1. Yih P.H., Saxena V., Steckl A.J., Phys. Stat. Sol. B, Vol. 202 (1997), p.605.
2. T. Troffer, M. Schadt, T. Frank, H. Itoh, G. Pensl, J. Heindl, H.P. Strunk, M. Maier, Phys. Stat. Sol. (a) Vol. 162 (1997), p.277.
3. N. Camara, K. Zekentes, Solid State Electronics Vol. 46 (2002), p. 1959.