Neutron-induced latchup in SRAMs at ground level

IEEE International Reliability Physics Symposium Proceedings

Volumn 2003-January, Issue , 2003, Pages 51-55

  Dodd, Paul E ^a   Shaneyfelt, Marty R ^a   Schwank, James R ^a   Hash, Gerald L ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

Hard errors; Neutron latchup rate; Neutron induced latchup; NLR; SER; Single event effects; Single event latchup; Single event upset; Soft errors; Terrestrial cosmic rays

Indexed keywords

COSMOLOGY; ERROR CORRECTION; ERRORS; MICROPROCESSOR CHIPS; NEUTRONS; OUTAGES; STATIC RANDOM ACCESS STORAGE;

HARD ERRORS; LATCH-UPS; NLR; SER; SINGLE EVENT EFFECTS; SINGLE EVENT LATCH-UP; SINGLE EVENT UPSETS; SOFT ERROR; TERRESTRIAL COSMIC RAYS;

RADIATION HARDENING;

EID: 29344441810     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2003.1197720     Document Type: Conference Paper

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