SCOPUS 정보 검색 플랫폼

Volumn 297, Issue 1, 2006, Pages 4-6

Growth of dilute GaSbN layers by liquid-phase epitaxy

(5) Mondal, A a Das, T D a Halder, N a Dhar, S a Kumar, J b

Author keywords

A1. Atomic force microscopy; A1. X ray diffraction; A3. Liquid phase epitaxy; A3. Semiconducting III V materials; B1. Antimonides; B2. Semiconducting gallium compounds

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LIQUID PHASE EPITAXY; POLYCRYSTALLINE MATERIALS; SURFACE ROUGHNESS; X RAY DIFFRACTION ANALYSIS;

ANTIMONIDES; BAND GAP; SEMICONDUCTING III-V MATERIALS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 37249001661 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2006.09.042 Document Type: Article

Times cited : (19)

References (11)

1
- 0001375334
- Bi W.G., and Tu C.W. Appl. Phys. Lett. 70 (1997) 1608
- (1997) Appl. Phys. Lett. , vol.70 , pp. 1608
- Bi, W.G.¹ Tu, C.W.²

2
- 0037381492
- Nishikawa A., Katayama R., Onabe K., and Shiraki Y. J. Crystal Growth 251 (2003) 427
- (2003) J. Crystal Growth , vol.251 , pp. 427
- Nishikawa, A.¹ Katayama, R.² Onabe, K.³ Shiraki, Y.⁴

3
- 0030079777
- Kondow M., Uomi K., Niwa A., Ktatani T., Watahiki S., and Yazawa Y. Jpn. J. Appl. Phys. Part I 35 (1996) 1273
- (1996) Jpn. J. Appl. Phys. Part I , vol.35 , pp. 1273
- Kondow, M.¹ Uomi, K.² Niwa, A.³ Ktatani, T.⁴ Watahiki, S.⁵ Yazawa, Y.⁶

4
- 0032679917
- Ungaro G., Le Roux G., Teissier R., and Harmand J.C. Electron. Lett. 35 (1999) 1246
- (1999) Electron. Lett. , vol.35 , pp. 1246
- Ungaro, G.¹ Le Roux, G.² Teissier, R.³ Harmand, J.C.⁴

5
- 0142026291
- Li W., Heroux J.B., and Wang W.I. J. Appl. Phys. 94 (2003) 4248
- (2003) J. Appl. Phys. , vol.94 , pp. 4248
- Li, W.¹ Heroux, J.B.² Wang, W.I.³

6
- 28344437569
- Veal T.D., Piper L.F.J., Jollands S., Bennett B.R., Jefferson P.H., Murdin B.N., Buckle L., Smith G.W., and Ashley T. Appl. Phys. Lett. 87 (2005) 132101
- (2005) Appl. Phys. Lett. , vol.87 , pp. 132101
- Veal, T.D.¹ Piper, L.F.J.² Jollands, S.³ Bennett, B.R.⁴ Jefferson, P.H.⁵ Murdin, B.N.⁶ Buckle, L.⁷ Smith, G.W.⁸ Ashley, T.⁹

7
- 0036684772
- Harmand J.-C., Caliman A., Rao E.V.K., Largeau L., Ramos J., Teissier R., Travers L., Ungaro G., Theys B., and Dias I.F.L. Semicond. Sci. Technol. 17 (2002) 778
- (2002) Semicond. Sci. Technol. , vol.17 , pp. 778
- Harmand, J.-C.¹ Caliman, A.² Rao, E.V.K.³ Largeau, L.⁴ Ramos, J.⁵ Teissier, R.⁶ Travers, L.⁷ Ungaro, G.⁸ Theys, B.⁹ Dias, I.F.L.¹⁰

8
- 0041513240
- Riech I., Mendoza-Alvarez J.G., Gomez-Herrera M.L., and Herrera-Perez J.L. Semicond. Sci. Technol. 18 (2003) 763
- (2003) Semicond. Sci. Technol. , vol.18 , pp. 763
- Riech, I.¹ Mendoza-Alvarez, J.G.² Gomez-Herrera, M.L.³ Herrera-Perez, J.L.⁴

9
- 4344575991
- Dhar S., Halder N., Kumar J., and Arora B.M. Appl. Phys. Lett. 85 (2004) 964
- (2004) Appl. Phys. Lett. , vol.85 , pp. 964
- Dhar, S.¹ Halder, N.² Kumar, J.³ Arora, B.M.⁴

10
- 27944480123
- Dhar S., Halder N., Mondal A., Bansal B., and Arora B.M. Semicond. Sci. Technol. 20 (2005) 1168
- (2005) Semicond. Sci. Technol. , vol.20 , pp. 1168
- Dhar, S.¹ Halder, N.² Mondal, A.³ Bansal, B.⁴ Arora, B.M.⁵

11
- 18444405259
- Buckle L., Bennett B.R., Jollands S., Veal T.D., Wilson N.R., Murdin B.N., McConville C.F., and Ashley T. J. Crystal Growth 278 (2005) 118
- (2005) J. Crystal Growth , vol.278 , pp. 118
- Buckle, L.¹ Bennett, B.R.² Jollands, S.³ Veal, T.D.⁴ Wilson, N.R.⁵ Murdin, B.N.⁶ McConville, C.F.⁷ Ashley, T.⁸

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.