MBE growth and photoreflectance study of GaAsN alloy films grown on GaAs (0 0 1)

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 427-431

  Nishikawa, A ^a   Katayama, R ^a   Onabe, K ^a   Shiraki, Y ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

A1. Bandgap; A1. Photreflectance; A3. Molecular beam epitaxy; B1. GaAsN

Indexed keywords

ATOMIC FORCE MICROSCOPY; FILM GROWTH; HIGH ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PARAMETER ESTIMATION; SPECTROSCOPIC ANALYSIS; X RAY DIFFRACTION ANALYSIS;

ALLOY FILMS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0037381492     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02189-9     Document Type: Conference Paper

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