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Volumn 18, Issue 8, 2003, Pages 763-767
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Effect of Te doping of InGaAsSb layers on the interface quality of InGaAsSb/GaSb heterojunctions
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Author keywords
[No Author keywords available]
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
COMPOSITION EFFECTS;
DIFFUSION;
EPITAXIAL GROWTH;
INTERFACES (MATERIALS);
LIQUID PHASE EPITAXY;
PHOTOACOUSTIC EFFECT;
PHOTODETECTORS;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR DOPING;
TELLURIUM;
GALLIUM ANTIMONIDE;
INDIUM GALLIUM ARSENIC ANTIMONIDE;
HETEROJUNCTIONS;
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EID: 0041513240
PISSN: 02681242
EISSN: None
Source Type: Journal
DOI: 10.1088/0268-1242/18/8/308 Document Type: Article |
Times cited : (8)
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References (8)
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