메뉴 건너뛰기




Volumn 18, Issue 8, 2003, Pages 763-767

Effect of Te doping of InGaAsSb layers on the interface quality of InGaAsSb/GaSb heterojunctions

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPOSITION EFFECTS; DIFFUSION; EPITAXIAL GROWTH; INTERFACES (MATERIALS); LIQUID PHASE EPITAXY; PHOTOACOUSTIC EFFECT; PHOTODETECTORS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; TELLURIUM;

EID: 0041513240     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/8/308     Document Type: Article
Times cited : (8)

References (8)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.