Detailed studies on the origin of nitrogen-related electron traps in dilute GaAsN layers grown by liquid phase epitaxy

Semiconductor Science and Technology

Volumn 20, Issue 12, 2005, Pages 1168-1172

  Dhar, S ^a   Halder, N ^a   Mondal, A ^a   Bansal, Bhavtosh ^b   Arora, B M ^b  

^a UNIVERSITY OF CALCUTTA   (India)

^b TATA INSTITUTE OF FUNDAMENTAL RESEARCH   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; GALLIUM NITRIDE; PHOTOLUMINESCENCE;

ANNEALING PROCESS; LOW TEMPERATURE PHOTOCURRENTS;

ELECTRON TRAPS;

EID: 27944480123     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/20/12/004     Document Type: Article

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