Growth of dilute GaNSb by plasma-assisted MBE

Journal of Crystal Growth

Volumn 278, Issue 1-4, 2005, Pages 188-192

  Buckle, L ^a   Bennett, B R ^b   Jollands, S ^b   Veal, T D ^b   Wilson, N R ^b   Murdin, B N ^c   McConville, C F ^b   Ashley, T ^a  

^a QINETIQ   (United Kingdom)

^b UNIVERSITY OF WARWICK   (United Kingdom)

^c UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

A1. Doping; A1. X ray diffraction; A3. Molecular beam epitaxy; B1. Antimonides; B2. Semiconducting gallium compounds; B2. Semiconducting III V materials

Indexed keywords

CRYSTAL GROWTH; ELECTRONIC EQUIPMENT; MOLECULAR BEAM EPITAXY; NEGATIVE IONS; NITROGEN; SEMICONDUCTOR DOPING; THERMAL EFFECTS; X RAY DIFFRACTION;

ANTIMONIDES; BANDGAP; ELECTRONEGATIVITY; SEMICONDUCTING III-V MATERIALS;

SEMICONDUCTING GALLIUM;

EID: 18444405259     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.12.148     Document Type: Conference Paper

References (9)

1. C.W. Tu J. Phys.: Condens. Matter 13 2001 7169
2. T. Ashley, T.M. Burke, G.J. Pryce, A.R. Adams, A. Andreev, B.N. Murdin, E.P. O'Reilly, and C.R. Pidgeon Solid State Electron. 47 2003 387
3. T.D. Veal, I. Mahboob, and C.F. McConville Phys. Rev. Lett. 92 2004 136801
4. W. Li, J.B. Heroux, and W.I. Wang J. Appl. Phys. 94 2003 4248
5. E.P. O'Reilly, and A. Lindsay Phys. Stat. Sol. (b) 216 1999 131
6. A. Lindsay, and E.P. O'Reilly Solid State Commun. 118 2001 313
7. A. Lindsay, E.P. O'Reilly, Private communication - parameters from tight binding calculations for 5-band k.p model of GaNSb.
8. A.S. Bracker, B.R. Bennett, M.J. Yang, J.C. Culbertson, and W.J. Moore J. Crystal Growth 220 2000 384
9. M. Kondow, and T. Kitatani Semicond. Sci. Technol. 17 2002 746