메뉴 건너뛰기




Volumn 91, Issue 23, 2007, Pages

Measurement of incomplete strain relaxation in a silicon heteroepitaxial film by geometrical phase analysis in the transmission electron microscope

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; EPITAXIAL FILMS; FINITE ELEMENT METHOD; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; IMAGE ANALYSIS; SILICON;

EID: 36849084481     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2821843     Document Type: Article
Times cited : (21)

References (15)
  • 12
    • 53249130873 scopus 로고    scopus 로고
    • Effects of Strain Gradients on Strain Measurements using Geometrical Phase Analysis in the Transmission Electron Microscope
    • J. Chung and L. Rabenberg, Effects of Strain Gradients on Strain Measurements using Geometrical Phase Analysis in the Transmission Electron Microscope., Ultramicroscopy (submitted).
    • Ultramicroscopy
    • Chung, J.1    Rabenberg, L.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.