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Volumn 319, Issue 1-2, 1998, Pages 157-162

Quantitative analysis of strain field in thin films from HRTEM micrographs

c CNRS (France)

Author keywords

Displacement; GaSb GaAs interface; HREM; Strain

Indexed keywords

FOURIER TRANSFORMS; HETEROJUNCTIONS; INVERSE PROBLEMS; SEMICONDUCTING GALLIUM ARSENIDE; STRAIN; TENSORS; TRANSMISSION ELECTRON MICROSCOPY;

BRAGG REFLECTION; GALLIUM ANTIMONIDE; LOCAL STRAIN TENSORS; STRAIN RELAXATION;

THIN FILMS;

EID: 0032050493 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(97)01113-9 Document Type: Article

Times cited : (55)

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