Misfit dislocation dissociation and Lomer formation in low mismatch SiGe/Si heterostructures

Journal of Materials Research

Volumn 20, Issue 2, 2005, Pages 447-455

  Marshall, A F ^a   Aubertine, D B ^a   Nix, W D ^a   McIntyre, P C ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DISLOCATIONS (CRYSTALS); DISSOCIATION; HETEROJUNCTIONS; MULTILAYERS; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

LOMER DISLOCATION FORMATION; MISFIT DISLOCATION DISSOCIATION; SIGNIFICANT CLIMB; SILICON GERMANIUM;

SILICON COMPOUNDS;

EID: 28044434093     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.2005.0065     Document Type: Article

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