Thermal investigation of GaN-based laser diode package

IEEE Transactions on Components and Packaging Technologies

Volumn 30, Issue 4, 2007, Pages 637-642

  Hwang, Wong Joon ^a   Lee, Tae Hee ^b   Choi, Jong Hwa ^c   Kim, Hyung Kun ^d   Nam, Ok Hyun ^e   Park, Y J ^d   Shin, Moo Whan ^c  

^a Seoul Semiconductor Company   (South Korea)

^b Epivalley Co Ltd   (South Korea)

^c Myong Ji University   (South Korea)

^d Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^e Korea Polytechnic University   (South Korea)

Author keywords

Die bonding; Gallium compounds; GaN; Heat transfer; Heat transfer coefficient; Laser diode (LD) package; Laser diodes; Optical communication; Optical power; Structure functions; Thermal analysis; Thermal resistance; Thermal transient measurement; Transient response

Indexed keywords

COOLING SYSTEMS; HEAT RESISTANCE; HEAT TRANSFER; MICROPROCESSOR CHIPS; OPTICAL COMMUNICATION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS; THERMODYNAMICS;

DIE BONDING; OPTICAL POWER; THERMAL TRANSIENT MEASUREMENT;

SEMICONDUCTOR LASERS;

EID: 36849082948     PISSN: 15213331     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCAPT.2007.906346     Document Type: Conference Paper

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