Current status of GaN-based multiple quantum well laser diodes

Physica Status Solidi (A) Applied Research

Volumn 201, Issue 12, 2004, Pages 2672-2674

  Watanabe, H ^a   Umezaki, T ^a   Minoura, J ^a   Ohashi, M ^a   Arazoe, N ^a   Nakamura, R ^a   Hatano, T ^a   Sonoyama, T ^a   Watanabe, Y ^a   Okawachi, M ^a   Iwayama, S ^a  

^a Toyoda Gosei Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; CRYSTAL DEFECTS; EPITAXIAL GROWTH; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTOR QUANTUM WELLS; BONDING; ELECTRIC CURRENTS; ETCHING; SAPPHIRE; SPURIOUS SIGNAL NOISE;

LATERAL EPITAXIAL GROWTH (LEG); MULTIPLE QUANTUM WELL (MQW); THRESHOLD CURRENT; TRIMETHYLALUMINUM (TMA); RELATIVE INTENSITY NOISE (RIN); ROOM TEMPERATURE (RT);

SEMICONDUCTOR LASERS; QUANTUM WELL LASERS;

EID: 6344235040     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200405041     Document Type: Conference Paper

References (3)

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