Localization effects in InGaN/GaN double heterostructure laser diode structures grown on bulk GaN crystals

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 10, 2005, Pages 7244-7249

  Czernecki, R ^a   Franssen, G ^b   Suski, T ^b   Swietlik T ^b   Borysiuk, J ^b   Grzanka, S ^a   Lefebvre, P ^c   Leszczynski M ^a,b   Perlin, P ^a,b   Grzegory, I ^a,b   Porowski, S ^b  

^a TOPGAN LTD   (Poland)

^b INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^c UNIVERSITÉ MONTPELLIER 2   (France)

Author keywords

Double heterostructure laser diode; Electric field screening; Hydrostatic pressure; Nitrides; Photoluminescence; Polarization induced electric fields; Time resolved photoluminescence

Indexed keywords

ELECTRIC FIELDS; HETEROJUNCTIONS; INDIUM COMPOUNDS; LASERS; NITRIDES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE;

ELECTRIC FIELD SCREENING; POLARIZATION INDUCED ELECTRIC FIELDS; TIME-RESOLVED PHOTOLUMINESCENCE;

SEMICONDUCTOR LASERS;

EID: 31544461540     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.7244     Document Type: Article

References (16)

1. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku and Y. Sugimotu: Jpn. J. Appl. Phys. 35 (1996) L74.
2. S. F. Chichibu, Y. Kawakami and T. Sota: in Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes, eds. S.Nakamura and S. F. Chichibu (Taylor & Francis, London, 2000) pp. 153-270.
3. F. Bernardini, V. Fiorentini and D. Vanderbilt: Phys. Rev. B 56 (1997) R10024.
4. I.-H. Ho and G. B. Stringfellow: Appl. Phys. Lett. 69 (1996) 2701.
5. S. Chichibu, T. Azuhata, T. Sota and S. Nakamura: Appl. Phys. Lett. 69 (1996) 4188.
6. R. Ben-Michael, D. Fekete and R. Sarfaty: Appl. Phys. Lett. 59 (1991) 3219.
7. T. Suski, G. Franssen, P. Perlin, R. Bohdan, A. Bercha, P. Adamiec, F. Dybała, W. Trzeciakowski, P. Prystawko, M. Leszczyński, I. Grzegory and S. Porowski: Appl. Phys. Lett. 84 (2004)1236.
8. I. Grzegory, M. Boćkowski, S. Krukowski, B. Łucznik, M. Wróblewski, J. L. Weyher, M. Leszczyński, P. Prystawko, R. Czernecki, J. Lehnert, G. Nowak, P. Perlin, H. Teisseyre, W. Purgal, W. Krupczynski, T. Suski, L. Dmowski, E. Litwin-Staszewska, C. Skierbiszewski, S. Łepkowski and S. Porowski: Acta Phys. Pol. A 100 (2001) 229.
9. S. Nakamura: IEICE Trans. Electron. E83-C (2000) 529.
10. P. Perlin, M. Leszczyński, P. Prystawko, P. Wiśniewski, R. Czernecki, C. Skierbiszewski, G. Nowak, W. Purgal, J. L. Weyher, G. Kamler, J. Borysiuk, M. Kryśko, M. Sarzyński, T. Suski, E. Litwin-Staszewska, L. Dmowski, G. Franssen, S. Grzanka, T. Świetlik, I. Grzegory, M. Boćkowski, B. Łucznik, S. Porowski, Ł. Gorczyca, A. Bering, W. Krupczyński, I. Makarowa, R. Wiśniewska and A. Libura: MRS Internet J. Nitride Semicond. Res. 9 (2004) 3.
11. P. Perlin, I. Gorczyca, T. Suski, P. Wisniewski, S. Łepkowski, N. E. Christensen, A. Svane, M. Hansen, S. P. DenBaars, B. Damilano, N. Grandjean and J. Massie: Phys. Rev. B 64 (2001) 115319.
12. J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager III, E. E. Haller, H. Lu, W. J. Schaff, Y. Saito and Y. Nanishi: Appl. Phys. Lett. 80 (2002) 3967.
13. G. Vaschenko, C. S. Menoni, D. Patel, C. N. Tome, B. Clausen, N. F. Gardner, J. Sun, W. Goetz, H. M. Ng and A. Y. Cho: Phys. Status Solidi B 235 (2003) 238.
14. B. Monemar: Phys. Rev. B 10 (1974) 676.
15. S. F. Chichibu, M. Sugiyama, T. Onuma, T. Kitamura, H. Nakanishi, T. Kuroda, A. Tackeuchi, T. Sota, Y. Ishida and H. Okumura: Appl. Phys. Lett. 79 (2001) 4319.
16. X. Chen, B. Henderson and K. P. O'Donnell: Appl. Phys. Lett. 60 (1992) 2672.