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Volumn 251, Issue 1-4, 2003, Pages 837-842

Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga2O3(Gd2O3) as gate dielectric

(10) Yang, B a Ye, P D a Kwo, J a Frei, M R a Gossmann, H J L a Mannaerts, J P a Sergent, M a Hong, M a Ng, K a Bude, J a

a AGERE SYSTEMS (United States)

Author keywords

A1. Interfaces; A3. Molecular beam epitaxy; B1. Ga2O3(Gd2O3) oxide; B1. GaAs; B2. Gate dielectric; B3. Depletion mode MOSFET

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; DIELECTRIC DEVICES; ETCHING; GATES (TRANSISTOR); HYSTERESIS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; TRANSCONDUCTANCE;

GATE DIELECTRICS;

MOSFET DEVICES;

EID: 0037380619 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(02)02273-X Document Type: Conference Paper

Times cited : (18)

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