The effects of sample preparation on electron holography of semiconductor devices

Institute of Physics Conference Series

Volumn 179, Issue , 2004, Pages 367-370

  Twitchett, A C ^a   Dunin Borkowski, R E ^a   Midgley, P A ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL GEOMETRY; CRYSTALLINE MATERIALS; CRYSTALLOGRAPHY; ELECTRIC POTENTIAL; ELECTRON DIFFRACTION; ELECTRON HOLOGRAPHY; ELECTROSTATICS; ION BEAMS; THICKNESS MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY; VACUUM;

CONVERGENT BEAM ELECTRON DIFFRACTION (CBED); ELECTROSTATIC POTENTIALS; FOCUSED ION BEAM (FIB) MILLING; SAMPLE PREPARATION;

SEMICONDUCTOR DEVICES;

EID: 5044229894     PISSN: 09513248     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. Gribelyuk M A et al. 2002 Phys. Rev. Lett. 89 2 5502-5
2. Twitchett A C et al. 2002 Phys. Rev. Lett. 88 23 8302-5
3. McCaffrey J P et al. 2001 Ultramicroscopy 87 97-104
4. Rau W D et al. 1999 Phys. Rev. Lett. 82 12 2614-2617
5. Saxton W O et al. 1979 Ultramicrosocopy 4 343-354
6. Twitchett A C et al. 2001 Inst. Phys. Conf. Ser. No. 168 493-496