Selective etching of Pt with respect to PtSi using a sacrificial low temperature germanidation process

Applied Physics Letters

Volumn 91, Issue 23, 2007, Pages

  Breil, N ^a   Halimaoui, A ^a   Skotnicki, T ^a   Dubois, E ^b   Larrieu, G ^b   Laszcz, A ^c   Ratajczak, J ^c   Rolland, G ^d   Pouydebasque, A ^d  

^a STMICROELECTRONICS   (France)

^b INSTITUT D ELECTRONIQUE   (France)

^c ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^d CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; LOW TEMPERATURE EFFECTS; PLATINUM COMPOUNDS; SCHOTTKY BARRIER DIODES; SILICON; SULFUR COMPOUNDS;

GERMANIDATION; LOW TEMPERATURE TRANSFORMATION; SCHOTTKY BARRIER MEASUREMENTS;

PLATINUM;

EID: 36849000214     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2821143     Document Type: Article

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