Contacts and junctions for the 45nm node

Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004

Volumn 4, Issue , 2004, Pages 107-112

  Taylor, W J ^a   Verret, E ^a   Capasso, Cristiano ^a   Nguyen, Jen Yee ^a   La, Le Boi ^a   Luckowski, Eric ^a   Martinez, Arturo ^a   Happ, Chris ^a   Schaeffer, Jamie ^a   Raymond, Mark ^a   Tobin, Phil ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITORS; CMOS INTEGRATED CIRCUITS; SEMICONDUCTOR DOPING; TRANSISTORS; ULSI CIRCUITS;

DOPED SOURCES; ENERGY MODULATIONS; NON-PLANAR DEVICES;

SEMICONDUCTOR JUNCTIONS;

EID: 3543133744     PISSN: None     EISSN: None     Source Type: Book    
DOI: None     Document Type: Conference Paper

References (20)

1. K. Ng and W. Lynch, IEEE Trans. Electron. Devices, 33 (1986) 965.
2. M. Orlowski, Simulation of Semiconductor Devices and Processes, Volume 6S.M. Sze, Physics of Semiconductor Devices 2nd Ed. (Wiley, New York, 1981), p.286.
3. S. Earles, M. Law, R. Brindos, K. Jones, S. Talwar, S. Corcoran. .IEEE Trans. Electron. Devices, 49 (2002) 1119.
4. J. Gelpey, K. Elliot, D. Camm, S. McCoy, J. Ross, D. Downey, and E. Arevalo, Rapid Thermal and Other Short-Time Processing Technologies III, edited by Timans, Gusev, Roozeboom, Ozturk, and Kwong, Electrochemical Society Proceedings PV2002-11 (Pennington, NJ, 2002), p. 313
5. W.S. Yoo and K Kang, ULSI Process Integration III, C.I. Claeys et al., editors, (Pennington, NJ, 2003)
6. C.M. Osburn and K.R. Bellur, Thin Solid Films 332, (1998) 428.
7. S.D. Kim, C.-M. Park, and J.C.S. Woo, International Electron Devices Meeting Tech. Digest., (2000) P. 723
8. International Technology Roadmap for Semiconductors 2003, http://public.itrs.net/Files/2003ITRS/Home2003.htm, Front End Processes Section, (2003) p. 24.
9. S. Gannavaram, N. Pesovic, and M. Ozturk, International Electron Devices Meeting Tech. Digest., (2000) 437
10. M. Ozturk, J. Liu, H. Mo, and N. Pesovic, International Electron Devices Meeting Tech. Digest., (2002) 375
11. M. Ozturk, J. Liu, and H. Mo, International Electron Devices Meeting Tech. Digest., (2003)
12. L. Gutai, IEEE Trans. Elect. Dev. 37, (1990) 2350
13. http://www.ise.com
14. K. Varahramyan and E.Verret, Sol. State Electronics 39, (1996) 1601
15. L.T. Su, M. J. Sherony, H. Hu, J.E. Chung, and D.A. Antoniadis, Elect. Dev. Lett. 15, (1994) 363
16. J. deSousa Pires, F. d'Heurle, H. Norde, S. Petersson and P.A. Tove, Appl. Phys. Lett. 36, (1980) 153.
17. S.M. Sze, Physics of Semiconductor Devices 2nd Ed. (Wiley, New York, 1981), p.286.
18. S.M. Sze, Physics of Semiconductor Devices 2nd Ed. (Wiley, New York, 1981), p.292.
19. O. Nur, M. Wilander, R. Turan, M. Sardela, G. Hansson, Appl. Phys. Lett., 68 (1996) 1084
20. H.-J. Li; P. Kohli; S. Ganguly, T.A. Kirichenko, S. Banerjee, P. Zeitzoff, Appl. Phys. Lett. 77,.(2000) 268.