Material and electrical characterization of Ni- And Pt-germanides for p-channel germanium Schottky source/drain transistors

Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06

Volumn , Issue , 2006, Pages 164-169

  Yao, H B ^a,b   Tan, C C ^a   Liew, S L ^a   Chua, C T ^a   Chua, C K ^a   Li, R ^b   Lee, R T P ^a,b   Lee, S J ^b   Chi, D Z ^a  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC PROPERTIES; NICKEL; PLATINUM; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GERMANIUM;

DRAIN TRANSISTORS; FORMATION TEMPERATURES; SCHOTTKY BARRIER HEIGHTS; TRANSITION METAL GERMANIDES;

MOSFET DEVICES;

EID: 34250190621     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/iwjt.2006.220884     Document Type: Conference Paper

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