Ferroelectric properties of Bi3.25Ce0.75Ti 3O12 thin films prepared by a liquid source misted chemical deposition

Thin Solid Films

Volumn 489, Issue 1-2, 2005, Pages 1-4

  Jeon, M K ^a   Chung, H J ^a,b   Kim, K W ^a   Oh, K S ^a   Woo, S I ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

Fatigue behavior; Ferroelectric properties; Liquid source misted chemical deposition

Indexed keywords

ANNEALING; BISMUTH COMPOUNDS; CRYSTALLIZATION; DEPOSITION; FATIGUE OF MATERIALS; FERROELECTRICITY; X RAY DIFFRACTION ANALYSIS;

FATIGUE BEHAVIOR; FERROELECTRIC PROPERTIES; LIQUID SOURCE MISTED CHEMICAL DEPOSITION; PEROVSKITE METAL OXIDE MATERIALS;

THIN FILMS;

EID: 23144444213     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.03.051     Document Type: Article

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