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Volumn 79, Issue 9, 2001, Pages 1363-1365

Formation of a p-type quantum dot at the end of an n-type carbon nanotube

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EID: 0038974266     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1396318     Document Type: Article
Times cited : (89)

References (18)
  • 14
    • 0039999702 scopus 로고    scopus 로고
    • g < 6 V, and the Coulomb gap shows an irregular pattern that exceeds 100 mV at some gate voltages. This is the typical behavior expected for dots in series. The pattern of Coulomb oscillations and gaps becomes irregular at low temperatures, but can be dominated by a single dot at higher temperatures (See Refs. 15 and 16).
    • g < 6 V, and the Coulomb gap shows an irregular pattern that exceeds 100 mV at some gate voltages. This is the typical behavior expected for dots in series. The pattern of Coulomb oscillations and gaps becomes irregular at low temperatures, but can be dominated by a single dot at higher temperatures (See Refs. 15 and 16).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.