Numerical simulation of thermoconvective flows and more uniform depositions in a cold wall rectangular APCVD reactor

Journal of Crystal Growth

Volumn 310, Issue 1, 2008, Pages 174-186

  Nicolas, Xavier ^a   Benzaoui, Abderrahmane ^a   Xin, Shihe ^b,c  

^a UNIVERSITÉ GUSTAVE EIFFEL   (France)

^b UNIVERSITÉ DE LYON   (France)

^c CNRS   (France)

Author keywords

A1. Computer simulation; A1. Rectangular thermal CVD reactor; A1. Surface deposition structure; A1. Thermoconvection; A3. Atmospheric pressure chemical vapour deposition

Indexed keywords

ATMOSPHERIC PRESSURE; CHEMICAL VAPOR DEPOSITION; GLASS INDUSTRY; THERMODYNAMICS;

BOUSSINESQ MODEL; RECTANGULAR THERMAL CVD REACTOR; SURFACE DEPOSITION STRUCTURE; THERMOCONVECTION;

COMPUTER SIMULATION;

EID: 36649024587     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.10.016     Document Type: Article

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