Numerical study of a three-dimensional chemical vapor deposition reactor with detailed chemistry

Journal of Computational Physics

Volumn 126, Issue 1, 1996, Pages 21-39

  Ern, Alexandre ^a,b,c   Giovangigli, Vincent ^b   Smooke, Mitchell D ^c  

^a UNIVERSITÉ PARIS EST   (France)

^b CENTRE DE MATHÉMATIQUES APPLIQUÉES   (France)

^c Yale University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CHEMICAL VAPOR DEPOSITION; DIFFUSION; EQUATIONS OF STATE; FLOW OF FLUIDS; GROWTH RATE; III-V SEMICONDUCTORS; ITERATIVE METHODS; SURFACE CHEMISTRY;

CARBON INCORPORATION; CHEMICAL VAPOR DEPOSITION REACTORS; DETAILED CHEMISTRY; FLOW PREDICTION; FLUID TEMPERATURES; FLUID-FLOW; HORIZONTAL CHANNELS; TEMPERATURE PREDICTION; THREE DIMENSIONAL CHEMICALS; TRIMETHYL GALLIUM;

NAVIER STOKES EQUATIONS;

EID: 0030162429     PISSN: 00219991     EISSN: None     Source Type: Journal    
DOI: 10.1006/jcph.1996.0117     Document Type: Article

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