Epitaxial growth and structural analysis of AlNGaN heterostructures

Applied Physics Letters

Volumn 91, Issue 22, 2007, Pages

  Yao, Z Q ^a   Zou, Y S ^a   Yang, Y ^a   Zhang, W J ^a   Lee, S T ^a   Zhang, Y Z ^b   Ye, Z Z ^b  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; DEFECT DENSITY; EPITAXIAL GROWTH; LIGHT EMITTING DIODES; MAGNETRON SPUTTERING; SINGLE CRYSTALS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

ALN EPILAYERS; DEFECT DENSITY.; ORIENTATION DEGREES;

HETEROJUNCTIONS;

EID: 36649024370     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2819616     Document Type: Article

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