Characterisation of a nitrogen ECR plasma source for the MBE growth of the dilute nitride semiconductor GaAsN

Surface Science

Volumn 601, Issue 24, 2007, Pages 5800-5802

  Usher, B F ^a   Warminski, T ^a   Dieing, T ^a   Prince, Kathryn ^b  

^a LA TROBE UNIVERSITY   (Australia)

^b AUSTRALIAN NUCLEAR SCIENCE AND TECHNOLOGY ORGANISATION   (Australia)

Author keywords

Dilute nitrides; Molecular beam epitaxy; Photoluminescence; Secondary ion mass spectrometry

Indexed keywords

MOLECULAR BEAM EPITAXY; NITRIDES; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY;

DILUTE NITRIDES; PLASMA SOURCE;

PLASMA THEORY;

EID: 36549023462     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2007.06.048     Document Type: Article

References (10)

1. Ustinov V.M., Cherkashin N.A., Bert N.A., Tsatsul'nikov A.F., Kovsh A.R., Jyh-Shang W., Li W., and Chi J.Y. In: Jones E.D., Manasreh O., Choquette K.D., Friedman D.J., and Johnstone D.K. (Eds). Progress in Semiconductor Materials for Optoelectronic Applications vol. 692 (2002), Mater. Res. Soc., Warrendale, PA, USA 35
2. Kovsh A.R., Wang J.S., Wei L., Shiao R.S., Chi J.Y., Volovik B.V., Tsatsul'nikov A.F., and Ustinov V.M. J. Vac. Sci. Technol. B 20 3 (2002) 1158
3. Nishikawa A., Katayama R., Onabe K., and Shiraki Y. J. Cryst. Growth 251 1-4 (2003) 427
4. Wang J.S., Kovsh A.R., Wei L., Chi J.Y., Wu Y.T., Wang P.Y., and Ustinov V.M. Nanotechnology 12 4 (2001) 430
5. Sun A., Yoon Soon F., Yew Kuok C., Loke Wan K., Fan W., Wang S., and Ng Tien K. J. Appl. Phys. 94 2 (2003) 1069
6. Fujimoto Y., Yonezu H., Momose K., Utsumi A., and Furukawa Y. J. Cryst. Growth (2001) 491
7. Gotthold D.W., Sridhar G., Holmes A.L.J., and Streetman B.G. In: Millunchick J.M., Barabasi A.L., Modine N.A., and Jones E.D. (Eds). Morphological and Compositional Evolution of Heteroepitaxial Semiconductor Thin Films Symposium vol. 618-620 (2000), Mater. Res. Soc., San Franciso, CA, USA
8. Mars D.E., Babic D.I., Kaneko Y., Ying-Lan C., Subramanya S., Kruger J., Perlin P., and Weber E.R. J. Vac. Sci. Technol. B 17 3 (1999) 1272
9. Dieing T., and Usher B.F. J. Vac. Sci. Technol. B 22 3 (2004) 1544
10. Zhang S.B., and Su-Huai W. Phys. Rev. Lett. 86 9 (2001) 1789 and Physica B 308-310 (2001) 839