Control of growth process and dislocation generation of GaAs1-xNx grown by all-solid-source molecular beam epitaxy

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 491-495

  Fujimoto, Y ^a   Yonezu, H ^a   Momose, K ^a   Utsumi, A ^a   Furukawa, Y ^a  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

A1. Defects; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting gallium aresenide

Indexed keywords

COMPOSITION EFFECTS; DISLOCATIONS (CRYSTALS); INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; SEMICONDUCTOR GROWTH; SUBSTRATES;

HETEROINTERFACES; SOLID SOURCE MOLECULAR BEAM EPITAXY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 18144433393     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00754-0     Document Type: Conference Paper

References (16)