High luminescence efficiency from GaAsN layers grown by MBE with RF nitrogen plasma source

Materials Research Society Symposium - Proceedings

Volumn 692, Issue , 2002, Pages 35-40

  Ustinov, Victor M ^a   Cherkashin, Nikolai A ^a   Bert, Nikolai A ^a   Tsatsul'nikov, Andrei F ^a   Kovsh, Alexei R ^a   Wang, Jyh Shang ^a   Weit, Li ^a   Chi, Jim Y ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; NITROGEN; PHOTOLUMINESCENCE; PLASMA SOURCES; SEMICONDUCTOR QUANTUM WELLS; STRUCTURE (COMPOSITION);

COMPOSITIONAL FLUCTUATIONS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0036061497     PISSN: 02729172     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (10)