Influence of N2 background pressure on the incorporation of arsenic during molecular beam epitaxy growth of GaAs

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 3, 2004, Pages 1544-1548

  Dieing, T ^a   Usher, B F ^a  

^a LA TROBE UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; HIGH ENERGY ELECTRON DIFFRACTION; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; NITROGEN; OSCILLATIONS; PLASMA SOURCES; PRESSURE EFFECTS; PROBABILITY; REACTION KINETICS; STOICHIOMETRY; SUBSTRATES; TEMPERATURE CONTROL;

BACKGROUND PRESSURE; CHEMOSORPTION; RATE EQUATIONS; SURFACE SITE BLOCKING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 3242705100     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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