Spectral properties of proton irradiated gallium nitride blue diodes

IEEE Transactions on Nuclear Science

Volumn 48, Issue 6 I, 2001, Pages 1778-1784

  Gaudreau, François ^a   Carlone, Cosmo ^a   Houdayer, Alain ^b   Khanna, Shyam M ^c  

^a UNIVERSITÉ DE SHERBROOKE   (Canada)

^b UNIVERSITÉ DE MONTRÉAL   (Canada)

^c DEFENCE RESEARCH AND DEVELOPMENT CANADA   (Canada)

Author keywords

Electrical measurements; Gallium nitride (GaN); Light emitting diodes; Proton irradiation; Spectral features

Indexed keywords

CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION; ELECTRIC CURRENTS; ELECTROLUMINESCENCE; ELECTRON TRANSITIONS; ELECTRON TUNNELING; GALLIUM NITRIDE; PROTON IRRADIATION; RADIATION DAMAGE; SPECTRUM ANALYSIS; THERMAL EFFECTS;

SPACE CHARGE RECOMBINATIONS;

LIGHT EMITTING DIODES;

EID: 0035721726     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.983130     Document Type: Conference Paper

References (12)

1. 2 MeV proton proton radiation damage studies of gallium nitride films through low temperature photoluminescence spectroscopy measurements
2. Effects of proton irradiation on Al/GaN/InGaN/GaN green emitting light diodes
3. Properties of gallium arsenide diodes between 4.2 and 300 K
4. Gallium Nitride I
5. Dominance of tunneling current and band filling in InGaN/AlGaN double heterostructure blue light emitting diodes
6. Influence of defects on the electrical and optical properties of blue light-emitting diodes based on III-V nitrides
7. Optical spectroscopy of Si-related donor and acceptor levels in Si-doped GaN grown by hydride vapor phase epitaxy
8. Calculation of acceptor ionization energies in GaN
9. Proton damage effects on light emitting diodes
10. 1-15 MeV proton and alpha particle radiation effects on GaAs quantum well light emitting diodes
11. Proton degradation of light emitting diodes