Island-growth of SiCGe films on SiC

Chinese Physics

Volumn 16, Issue 11, 2007, Pages 3470-3474

  Li, Lian Bi ^a   Chen, Zhi Ming ^a   Lin, Tao ^a   Pu, Hong Bin ^a   Li, Qing Min ^a   Li, Jia ^a  

^a XI'AN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Hot wall low pressure chemical vapour deposition; Island growth; SiC; SiCGe

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPILAYERS; FILM GROWTH; FLOW RATE; SEMICONDUCTING SILICON COMPOUNDS; SIZE DISTRIBUTION; TERNARY ALLOYS;

CASCADING TRIANGULAR MODE; GROWTH DURATIONS; SPHERICAL ISLANDS;

METALLIC FILMS;

EID: 36448941525     PISSN: 10091963     EISSN: 17414199     Source Type: Journal    
DOI: 10.1088/1009-1963/16/11/053     Document Type: Article

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