Dependence of bimodal size distribution on temperature and optical properties of InAs quantum dots grown on vicinal GaAs (100) substrates by using MOCVD

Chinese Physics

Volumn 15, Issue 5, 2006, Pages 1114-1119

  Liang, Song ^a   Zhu, Hong Liang ^a   Pan, Jiao Qing ^a   Wang, Wei ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Bimodal size distribution; Indium arsenide; MOCVD; Self assembled quantum dots

Indexed keywords

METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES;

BIMODAL SIZE DISTRIBUTION; INDIUM ARSENIDE; SELF-ASSEMBLED QUANTUM DOTS; VICINAL SUBSTRATE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33646547317     PISSN: 10091963     EISSN: 17414199     Source Type: Journal    
DOI: 10.1088/1009-1963/15/5/042     Document Type: Article

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