Silicon carbide and silicon carbide:Germanium heterostructure bipolar transistors

Applied Physics Letters

Volumn 78, Issue 14, 2001, Pages 2073-2075

  Roe, K J ^a   Katulka, G ^a   Kolodzey, J ^a   Saddow, S E ^b   Jacobson, D ^c  

^a UNIVERSITY OF DELAWARE   (United States)

^b MISSISSIPPI STATE UNIVERSITY   (United States)

^c NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035794362     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1358851     Document Type: Article

References (6)

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3. G. L. Katulka, J. Kolodzey, K. Roe, M. Dashiell, T. Adam, R. Reichel, C. Swann, R. G. Wilson, M. W. Tsao, J. Rabolt, R. C. Clarke, G. Eldridge, and K. Messham, presented at the MRS 2000 Spring Meeting, Symposium T: Wide Bandgap Electronic Devices, San Francisco, CA, 24-28 April 2000, p. 24.
4. J. Ziegler, The Stopping and Range of Ions in Solids (Pergamon, New York, 1985).
5. S. E. Saddow, V. Kumar, T. Isaacs-Smith, J. Williams, A. J. Hsieh, M. Graves, and J. T. Wolan, Proceedings of the Korean Institute of Electrical and Electronic Material Engineers (KIEEME) (in press).
6. E. J. Prinz and J. C. Sturm, IEEE Trans. Electron Devices 38, 2695 (1991).