Finite element analysis of stress and strain distributions in InAs/GaAs quantum dots

Chinese Physics

Volumn 15, Issue 6, 2006, Pages 1315-1319

  Zhou, Wang Min ^a,b   Wang, Chong Yu ^b,c   Chen, Yong Hai ^d   Wang, Zhan Guo ^d  

^a ZHEJIANG UNIVERSITY OF TECHNOLOGY   (China)

^b CENTRAL IRON AND STEEL RESEARCH INSTITUTE   (China)

^c TSINGHUA UNIVERSITY   (China)

^d INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Finite element method; Quantum dots; Strain and stress distribution; Strain energy

Indexed keywords

CONCENTRATION (PROCESS); FINITE ELEMENT METHOD; INDIUM COMPOUNDS; NANOTECHNOLOGY; SEMICONDUCTING GALLIUM ARSENIDE; STRAIN CONTROL; WETTING;

MAXIMAL STRAIN ENERGY DENSITY; NANOSYSTEMS; STRAIN AND STRESS DISTRIBUTION; STRAIN ENERGY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33746650596     PISSN: 10091963     EISSN: 17414199     Source Type: Journal    
DOI: 10.1088/1009-1963/15/6/030     Document Type: Article

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