A light-activated SiC Darlington transistor using SiCGe as base layer

Chinese Physics Letters

Volumn 20, Issue 3, 2003, Pages 430-432

  Chen, Zhi Ming ^a   Pu, Hong Bin ^a   Beyette Jr , Fred R ^b  

^a XI'AN UNIVERSITY OF TECHNOLOGY   (China)

^b 705 Engineering Research Center   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROMAGNETIC PULSE; GERMANIUM COMPOUNDS; HETEROJUNCTIONS; SI-GE ALLOYS;

BASE CURRENTS; BASE LAYERS; DARLINGTON; DARLINGTON TRANSISTOR; ELECTROMAGNETICS; ELECTRONIC SIGNALS; INTERFERENCE PROBLEMS; LIGHT ACTIVATED DARLINGTON TRANSISTOR; OPTICAL ILLUMINATION; PERFORMANCE;

SILICON CARBIDE;

EID: 0037349680     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/20/3/334     Document Type: Article

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