Influence of Si concentration on the evolution of shape and size of self-assembled Ge islands

Wuli Xuebao/Acta Physica Sinica

Volumn 53, Issue 9, 2004, Pages 3136-3140

  Deng, Ning ^a   Chen, Pei Yi ^a   Li, Zhi Jian ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

Critical volume; Self assembled growth SiGe quantum dots; Si concentration

Indexed keywords

EID: 8844219853     PISSN: 10003290     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (14)