Effect of the longitudinal and transverse stacking period of InAs / GaAs quantum dots on the distribution of strain field

Wuli Xuebao/Acta Physica Sinica

Volumn 55, Issue 10, 2006, Pages 5023-5029

  Liu, Yu Min ^a,b   Yu, Zhong Yuan ^a,b   Yang, Hong Bo ^a,b   Huang, Yong Zhen ^c  

^a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^b BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^c INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Self organization; Semiconductor quantum dot; Strain

Indexed keywords

EID: 33751560448     PISSN: 10003290     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (20)