Hetero-epitaxial growth of SiCGe on SiC

Microelectronic Engineering

Volumn 83, Issue 1 SPEC. ISS., 2006, Pages 170-175

  Chen, Z M ^a   Pu, H B ^a   Wo, L M ^a   Lu, G ^a   Li, L B ^a   Tan, C X ^a  

^a XI'AN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Heterojunction; LPCVD; Optoelectronics; SiC; SiCGe

Indexed keywords

EPITAXIAL GROWTH; GERMANIUM; HETEROJUNCTIONS; OPTICAL SWITCHES; OPTOELECTRONIC DEVICES; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

GERMANIUM ATOMS; LPCVD; SICGE;

SILICON CARBIDE;

EID: 30344471060     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.10.053     Document Type: Conference Paper

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