Comparison of pMOSFET total dose response for Co-60 gammas and high-energy protons

IEEE Transactions on Nuclear Science

Volumn 48, Issue 3 III, 2001, Pages 908-912

  Pease, Ronald L ^a,b   Simons, Mayrant ^a,c   Marshall, Paul ^a,d  

^a IEEE   (United States)

^b RLP Research Inc   (United States)

^c RTI INTERNATIONAL   (United States)

^d NRL/SFA   (United States)

Author keywords

Cobalt; Proton radiation effects; Protons; Radiation detectors; Radiation effects

Indexed keywords

PROTON RADIATION EFFECTS; RADIATION FIELD EFFECT TRANSISTORS;

COBALT; GAMMA RAYS; HIGH ENERGY PHYSICS; MOSFET DEVICES; PROTON IRRADIATION; PROTONS; RADIATION DETECTORS; RADIATION EFFECTS; SILICA;

DOSIMETERS;

EID: 0035355333     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.940131     Document Type: Article

References (23)

1. Application of MOSFET dosimeters on MIR and BION satellites
2. Measurement of radiation environments from CREDO-II on STRV and APEX
3. A dose rate independent PMOS dosimeter for space application
4. Improving the sensitivity of PMOS dosimeters using dual dielectrics
5. Common-source TLD and RADFET characterization of Co-60, Cs-137, and X-ray irradiation sources
6. Dose enhancement in a room Co-60 source
7. Personal communication
8. Comparison of the total dose and 60 MeV proton-irradiation response of CMOS transistors operated at 4.2 K
9. Models for total dose degradation of linear integrated circuits
10. Proton damage effects in linear integrated circuits
11. Comparison of x-ray, gamma and proton irradiation for space hardness assurance testing
12. Proton and heavy-ion radiation damage studies in MOS transistors
13. The response of thick oxide dosimeters to high energy radiation
14. Opportunities for single event and other radiation effects testing and research at the Indiana University Cyclotron Facility
15. Comparison of Indiana University Cyclotron Facility Faraday cup proton dosimetry with radiochromic films, a calorimeter and a calibrated ion chamber
16. Calibrated charged particle radiation system with precision dosimetric measurement and control
17. 2 films
18. Analysis of damage in MOS devices for several radiation environments
19. Ionizing Radiation Effects in MOS Devices and Circuits
20. A comparison of ionizing radiation damage in MOSFETs from Co-60 gamma rays, 0.5 to 22 MeV protons and 1 to 7 MeV electrons
21. 2: Processing effects and implications for radiation hardening
22. The relationship between Co-60 and 10 keV x-ray damage in MOS devices