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Volumn 50, Issue 2, 2005, Pages 289-303

Application of commercial MOSFET detectors for in vivo dosimetry in the therapeutic x-ray range from 80 kV to 250 kV

Author keywords

[No Author keywords available]

Indexed keywords

CALIBRATION; DOSIMETRY; ERROR CORRECTION; IRRADIATION; MOSFET DEVICES; RADIOTHERAPY; SIGNAL PROCESSING;

EID: 13644255923     PISSN: 00319155     EISSN: None     Source Type: Journal    
DOI: 10.1088/0031-9155/50/2/008     Document Type: Article
Times cited : (67)

References (23)
  • 1
    • 0031868395 scopus 로고    scopus 로고
    • The characterization of a commercial MOSFET dosimeter system for use in diagnostic x ray
    • Bower M W and Hintenlang D E 1998 The characterization of a commercial MOSFET dosimeter system for use in diagnostic x ray Health Phys. 75 197-204
    • (1998) Health Phys. , vol.75 , pp. 197-204
    • Bower, M.W.1    Hintenlang, D.E.2
  • 3
    • 0020137053 scopus 로고
    • A solid water phantom material for radiotherapy x-ray and gamma-ray beam calibrations
    • Constantinou C, Attix F H and Paliwal B R 1982 A solid water phantom material for radiotherapy x-ray and gamma-ray beam calibrations Med. Phys. 9 436-41
    • (1982) Med. Phys. , vol.9 , pp. 436-441
    • Constantinou, C.1    Attix, F.H.2    Paliwal, B.R.3
  • 4
    • 0031961068 scopus 로고    scopus 로고
    • Quality assurance in radiation oncology. A study of feasibility and impact on action levels of an in vivo dosimetry program during breast cancer irradiation
    • Cozzi L and Fogliata-Cozzi A 1998 Quality assurance in radiation oncology. A study of feasibility and impact on action levels of an in vivo dosimetry program during breast cancer irradiation Radiother. Oncol. 47 29-36
    • (1998) Radiother. Oncol. , vol.47 , pp. 29-36
    • Cozzi, L.1    Fogliata-Cozzi, A.2
  • 5
    • 0036888598 scopus 로고    scopus 로고
    • Characterization of high-sensitivity metal oxide semiconductor field effect transistor dosimeters system and LiF:Mg,Cu,P thermoluminescence dosimeters for use in diagnostic radiology
    • Dong S L, Chu T C, Lan G Y, Wu T H, Lin Y C and Lee J S 2002 Characterization of high-sensitivity metal oxide semiconductor field effect transistor dosimeters system and LiF:Mg,Cu,P thermoluminescence dosimeters for use in diagnostic radiology Appl. Radiat. Isot. 57 883-91
    • (2002) Appl. Radiat. Isot. , vol.57 , pp. 883-891
    • Dong, S.L.1    Chu, T.C.2    Lan, G.Y.3    Wu, T.H.4    Lin, Y.C.5    Lee, J.S.6
  • 6
    • 0031441616 scopus 로고    scopus 로고
    • The response of a MOSFET, p-type semiconductor and LiF TLD to quasi-monoenergetic x-rays
    • Edwards C R, Green S, Palethorpe, J E and Mountford P J 1997 The response of a MOSFET, p-type semiconductor and LiF TLD to quasi-monoenergetic x-rays Phys. Med. Biol. 42 2383-91
    • (1997) Phys. Med. Biol. , vol.42 , pp. 2383-2391
    • Edwards, C.R.1    Green, S.2    Palethorpe, J.E.3    Mountford, P.J.4
  • 7
    • 0033556681 scopus 로고    scopus 로고
    • In vivo dosimetry during external photon beam radiotherapy
    • Essers M and Mijnheer B J 1999 In vivo dosimetry during external photon beam radiotherapy. Int. J. Radiat. Oncol. Biol. Phys. 15 245-59
    • (1999) Int. J. Radiat. Oncol. Biol. Phys. , vol.15 , pp. 245-259
    • Essers, M.1    Mijnheer, B.J.2
  • 10
    • 0019388414 scopus 로고
    • The theoretical and microdosimetric basis of thermoluminescence and applications to dosimetry
    • Horowitz Y S 1981 The theoretical and microdosimetric basis of thermoluminescence and applications to dosimetry Phys. Med. Biol. 26 765-824
    • (1981) Phys. Med. Biol. , vol.26 , pp. 765-824
    • Horowitz, Y.S.1
  • 11
    • 5444262234 scopus 로고    scopus 로고
    • Practical guidelines for the implementation of in vivo dosimetry with diodes in external radiotherapy with photon beams (entrance dose)
    • ESTRO Booklet No 5
    • Huyskens D, Bogaerts R, Verstraete J, Lööf M, Nyström H, Fiorino C, Broggi S, Jornet N, Ribas M and Thwaites D 2001 Practical guidelines for the implementation of in vivo dosimetry with diodes in external radiotherapy with photon beams (entrance dose) ESTRO booklet No 5
    • (2001)
    • Huyskens, D.1    Bogaerts, R.2    Verstraete, J.3    Lööf, M.4    Nyström, H.5    Fiorino, C.6    Broggi, S.7    Jornet, N.8    Ribas, M.9    Thwaites, D.10
  • 13
    • 0036388019 scopus 로고    scopus 로고
    • Measurements in radiotherapy beams using on-line MOSFET detectors
    • Kron T, Rosenfeld A, Lerch M and Bazley S 2002 Measurements in radiotherapy beams using on-line MOSFET detectors Radiat. Prot. Dosimetry 101 445-8
    • (2002) Radiat. Prot. Dosimetry , vol.101 , pp. 445-448
    • Kron, T.1    Rosenfeld, A.2    Lerch, M.3    Bazley, S.4
  • 14
    • 0030292867 scopus 로고    scopus 로고
    • Entrance and exit dose measurements with semiconductors and thermoluminescent dosemeters: A comparison of methods and in vivo results
    • Loncol T, Greffe J L, Vynckier S and Scalliet P 1996 Entrance and exit dose measurements with semiconductors and thermoluminescent dosemeters: a comparison of methods and in vivo results Radiother. Oncol. 41 179-87
    • (1996) Radiother. Oncol. , vol.41 , pp. 179-187
    • Loncol, T.1    Greffe, J.L.2    Vynckier, S.3    Scalliet, P.4
  • 17
    • 0033013459 scopus 로고    scopus 로고
    • Evaluation of a MOSFET radiation sensor for the measurement of entrance surface dose in diagnostic radiology
    • Peet D J and Pryor M D 1999 Evaluation of a MOSFET radiation sensor for the measurement of entrance surface dose in diagnostic radiology Br. J. Radiol. 72 562-8
    • (1999) Br. J. Radiol. , vol.72 , pp. 562-568
    • Peet, D.J.1    Pryor, M.D.2
  • 18
    • 0028213977 scopus 로고
    • Evaluation of a dual bias dual metal oxide-silicon semiconductor field effect transistor detector as radiation dosimeter
    • Soubra M, Cygler J and Mackay G 1994 Evaluation of a dual bias dual metal oxide-silicon semiconductor field effect transistor detector as radiation dosimeter Med. Phys. 21 567-72
    • (1994) Med. Phys. , vol.21 , pp. 567-572
    • Soubra, M.1    Cygler, J.2    Mackay, G.3
  • 20
    • 13644249845 scopus 로고    scopus 로고
    • Thomson and Nielson Electronics Ltd Technical Note No 4 (Ottawa)
    • Thomson and Nielson Electronics Ltd 1996 Technical Note No 4 (Ottawa)
    • (1996)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.