Characterisation of radiation response of 400 nm implanted gate oxide RADFETs

2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings

Volumn 2, Issue , 2002, Pages 727-730

  Jaksic, A ^a   Ristic, G ^b   Pejovic, M ^c   Mohammadzadeh, A ^d   Lane, W ^e  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b UNIVERSITY OF TORONTO   (Canada)

^c UNIVERSITY OF NI   (Serbia)

^d EUROPEAN SPACE AGENCY   (France)

^e ANALOG DEVICES   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

MICROELECTRONICS;

BASIC MECHANISM; BORON IMPLANTATION; GATE OXIDE; MOS-FET; P CHANNELS; RADFETS; RADIATION RESPONSE;

GATES (TRANSISTOR);

EID: 79955755558     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MIEL.2002.1003360     Document Type: Conference Paper

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