Radiation dose measurement using MOSFETs

IEEE Instrumentation and Measurement Magazine

Volumn 1, Issue 2, 1998, Pages 26-34

  Sarrabayrouse, G ^a,b,c,d,e   Siskos, S ^a,f,g  

^a UNIVERSITÉ PAUL SABATIER   (France)

^b Centre National d'Etudes Spatiales   (France)

^c CNRS   (France)

^d LAAS CNRS   (France)

^e Material Research Society   (United States)

^f ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^g Polytechnic School of Thessaloniki   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

COST EFFECTIVENESS; DOSIMETRY; RADIATION DETECTORS; READOUT SYSTEMS;

INTERSTITIAL DOSIMETRY; INTRACAVITY DOSIMETRY; TOTAL BODY IRRADIATION (TBI);

MOSFET DEVICES;

EID: 0032094770     PISSN: 10946969     EISSN: None     Source Type: Journal    
DOI: 10.1109/5289.685494     Document Type: Article

References (8)

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2. L. Adams and A. G. Holmes-Siedle, "The development of an MOS dosimetry unit for use in space," IEEE Trans. Nucl. Sci., vol. NS-25, no. 6, pp. 1607-1612, 1978.
3. th ASTM-EURATOM Symposium on Reactor Dosimetry, Strasbourg, France, Aug. 1990.
4. F. Vettese, C. Donickak, P. Bourgeault, and G. Sarrabayrouse, "Assesment of a new p-MOSFET usable as a dose rate insensitive gamma dose sensor," IEEE Trans. Nucl. Sci., vol. 43, no. 3, pp. 991-996, 1996.
5. M. Butson, A. Rozenfeld, J. N. Mathur, M. Carolan, T. P. Y. Wong, and P. E. Metcalfe, "A new radiotherapy surface dose detector: The MOSFET," Med. Phys., vol. 23, no. 5, pp. 655-658, 1996.
6. A. Chatzigiannaki, S. Siskos, and G. Sarrabayrouse, "Unbiased stacked MOSFETs for in-vivo dosimetry," World Cong. on Medical Physics and Biomedical Engineering, Nice, France, Sept. 1997.
7. B. O'Connell, A. Kelleher, W. Lane, and L. Adams, "Stacked Radfets for increasing radiation sensitivity," IEEE Trans. Nucl. Sci., vol. 43, no. 3, pt. 1, pp. 985-990, 1996.
8. M. Soubra, J. Cygler, and G. Mackay, "Evaluation of a dual-bias dual-metal oxide-silicon semiconductor field-effect transistor detector as radiation dosimeter," Medical Physics, vol. 21, no. 4, pp. 567-572, 1994.