Radiation monitoring in Mrad range using radiation-sensing field-effect transistors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 545, Issue 1-2, 2005, Pages 252-260

  Stanic S ^a   Asano, Y ^a   Ishino, H ^b   Igarashi, A ^a   Iwaida, S ^a   Nakano, Y ^a   Terazaki, H ^a   Tsuboyama, T ^c   Yoda, I ^b   Zontar D ^d  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^c HIGH ENERGY ACCELERATOR RESEARCH ORGANIZATION KEK   (Japan)

^d JO EF STEFAN INSTITUTE   (Slovenia)

Author keywords

Annealing; B factory; Radiation monitoring; Silicon detectors

Indexed keywords

ANNEALING; DEPOSITION; ELECTRIC PROPERTIES; PHOTONS; RADIATION DETECTORS; SILICON; THRESHOLD VOLTAGE;

B FACTORY; RADIATION MONITORING; RADIATION-SENSING; SILICON DETECTORS;

FIELD EFFECT TRANSISTORS;

EID: 21044434020     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2005.01.347     Document Type: Article

References (11)

1. A. Abashian Nucl. Instr. and Meth. A 479 2002 117
2. B. Camanzi IEEE Trans. Nucl. Sci. NS-49 2002 1275
3. A. Holmes-Siedle Nucl. Instr. and Meth. 121 1974 169
4. A. Holmes-Siedle, A Handbook of Radiation Effects, Oxford UP 134, 2001.
5. T.P. Ma, and P.V. Dressendorfer Ionizing Radiation Effects in MOS Devices and Circuits 1989 Wiley New York
6. M.G. Buehler, B.R. Blaes, G.A. Soli, and G.R. Tardio On-chip P-MOSFET Dosimetry IEEE Trans. Nucl. Sci. NS-40 1993 6
7. A. Holmes-Siedle, REM's Integrating Dosimeter System Based on the RadFET, REM-TR 98-3, REM Oxford Ltd., 1999.
8. A.B. Rosenfeld A system for radiation damage monitoring IEEE Trans. Nucl. Sci. NS-46 1999 6
9. F. James, MINUIT - function minimization and error analysis, CERN Program Library D506, 1988.
10. Aminogray specification sheet, Hitachi Cable Co.
11. T. Kojima, et al., Alanine Dosimeter Molded with Polystyrene, JAERI-M 86-137, 1986.