Experimental evidence of mobility enhancement in short-channel ultra-thin body double-gate MOSFETs by magnetoresistance technique

Solid-State Electronics

Volumn 51, Issue 11-12, 2007, Pages 1494-1499

  Chaisantikulwat, W ^a   Mouis, M ^a   Ghibaudo, G ^a   Cristoloveanu, S ^a   Widiez, J ^b   Vinet, M ^b   Deleonibus, S ^b  

^a IMEP LAHC   (France)

^b CEA LETI   (France)

Author keywords

Carrier transport; DG MOSFET; Geometric magnetoresistance; Mobility extraction; Short channel transistor; Volume inversion

Indexed keywords

CARRIER MOBILITY; CARRIER TRANSPORT; MAGNETORESISTANCE; MOSFET DEVICES; SCATTERING;

DOUBLE-GATE TRANSISTOR; MOBILITY GAIN; SINGLE-GATE MODE MOBILITY; ULTRA-THIN BODY (UTB);

SOLID STATE PHYSICS;

EID: 36248997062     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.09.017     Document Type: Article

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