Separation of the bulk lifetime and surface recombination velocities in semiconductor wafer by a single laser microwave photoconductance

Semiconductor Science and Technology

Volumn 19, Issue 8, 2004, Pages 959-963

  Chen, F X ^a   Cui, R Q ^a   Xu, L ^a   Meng, F Y ^a   Zhao, Z X ^a   Zhou, Z B ^a  

^a SHANGHAI JIAO TONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; CHARGE CARRIERS; DIFFUSION IN SOLIDS; ELECTRONS; LASERS; MICROWAVE ACOUSTIC DEVICES; PHOTOCONDUCTING DEVICES; SILICON WAFERS; SURFACE REACTIONS; VELOCITY;

FREE CARRIER ABSORPTION (FCA); MICROWAVE PHOTOCONDUCTANCE (MWPCD); SEMICONDUCTOR WAFERS; SURFACE RECOMBINATION VELOCITIES;

SEMICONDUCTOR DEVICES;

EID: 4043140645     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/8/002     Document Type: Article

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