Measurement method of the ideal I-V characteristics of diodes up to the built-in voltage limit

Solid-State Electronics

Volumn 43, Issue 7, 1999, Pages 1201-1207

  Bellone, S ^a   Daliento, S ^b   Sanseverino, A ^b  

^a UNIVERSITY OF SALERNO   (Italy)

^b UNIVERSITY OF NAPLES FEDERICO II   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; DIODES; SOLID STATE DEVICES; VOLTAGE MEASUREMENT;

BIPOLAR DEVICES; BUILT-IN VOLTAGE LIMIT; INJECTION LEVEL; LATERAL POWER DIODES; SERIES RESISTANCE;

ELECTRIC RESISTANCE MEASUREMENT;

EID: 0032663126     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00046-5     Document Type: Article

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