Depth distribution of carrier lifetime in 65 MeV oxygen ion irradiated silicon wafers

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 244, Issue 1, 2006, Pages 161-165

  Shinde, N S ^a   Dahiwale, S S ^b   Kanjilal, D ^c   Bhoraskar, V N ^b   Dhole, S D ^b  

^a NAGOYA UNIVERSITY   (Japan)

^b UNIVERSITY OF PUNE   (India)

^c INTER UNIVERSITY ACCELERATOR CENTRE   (India)

Author keywords

Carrier lifetime; Electronic energy loss; Swift heavy ions; Vacancy defects

Indexed keywords

CARRIER LIFETIME; ELECTRONIC ENERGY LOSS; SWIFT HEAVY IONS; VACANCY DEFECTS;

ANNEALING; ENERGY DISSIPATION; GRAIN BOUNDARIES; HEAVY IONS; IRRADIATION; OXYGEN;

SILICON WAFERS;

EID: 47649105749     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.11.030     Document Type: Conference Paper

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