A novel measurement method of the spatial carrier lifetime profile based on the OCVD technique

IEEE International Conference on Microelectronic Test Structures

Volumn , Issue , 2004, Pages 111-116

  Bellone, Salvatore ^a   Licciardo, G Domenico ^a   Neitzert, H Christoph ^a  

^a UNIVERSITY OF SALERNO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DIODE VOLTAGE; OPEN CIRCUIT VOLTAGE DECAY (OCVD); POWER DISSIPATION;

CAPACITANCE; CATHODE RAY OSCILLOSCOPES; COMPUTER SIMULATION; DIODES; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; PLASMAS;

CHARGE CARRIERS;

EID: 3042654671     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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4. S. Bellone and P. Spirito, "Detection of Recombination Centers in EpitaxialLayers by Temperature Scanning and Depth Lifetime Profiling", IEEE Electron Dev. Letters, vol. 12, pp.332-334, 1991
5. S. Bellone, S. Daliento and A. Sanseverino, "A Measurement Method of the ideal I-V Characteristics of Diodes up to the Built-in Voltage Limit", Solid-State Electron., pp.1201-1207, 1999
6. S. Bellone. G.Licciardo and H.C. Neitzert, "Modelling and Characterisation of the OCVD Response at an Arbitrary Time and Injection Level", Solid-State Electron., 2004, in press
7. MEDICI User Guide. Palo Alto, CA: Technology Modelling Associates Inc., 1993.
8. J. Vobecky', P. Hazdra and V. Za'hlava, "Open Circuit Voltage Decay Lifetime of Ion Irradiated Devices", Microelectronics Journal, vol. 30, 513-520, 1999