Modelling and characterisation of the input I-V curves of bipolar JFET structures showing a negative resistance behaviour

Solid-State Electronics

Volumn 45, Issue 3, 2001, Pages 483-488

  Bellone, S ^a   Daliento, S ^b   Sanseverino, A ^b  

^a UNIVERSITY OF SALERNO   (Italy)

^b UNIVERSITY OF NAPLES FEDERICO II   (Italy)

Author keywords

Bipolar JFET devices; Modelling; Negative resistance devices

Indexed keywords

BIPOLAR TRANSISTORS; COMPUTATIONAL METHODS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; CURVE FITTING; ELECTRIC RESISTANCE MEASUREMENT; LIGHT MODULATION; SEMICONDUCTOR DEVICE MODELS;

NEGATIVE RESISTANCE BEHAVIOR;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 0035278262     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00252-5     Document Type: Article

References (10)

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