A two-dimensional analytical model of homojunction GaAs BMFET structures

Solid-State Electronics

Volumn 39, Issue 8, 1996, Pages 1221-1229

  Bellone, S ^a   Rinaldi, N ^c   Vitale, G F ^c   Cocorullo, G ^c   Schweeger, G ^b   Hartnagel, H L ^b  

^a University of Benevento   (Italy)

^b DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; GATES (TRANSISTOR); GEOMETRY; OPTIMIZATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; TOPOLOGY;

DRAIN CURRENT; GATE CROWDING MODELS; HOLE ELECTRON PLASMA; HOMOJUNCTION BIPOLAR TRANSISTORS;

BIPOLAR TRANSISTORS;

EID: 0030211880     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(96)00031-7     Document Type: Review

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