Enhanced-performance of AlGaN-GaN HEMTs grown on grooved sapphire substrates

IEEE Electron Device Letters

Volumn 26, Issue 12, 2005, Pages 870-872

  Feng, Z H ^a   Cai, S J ^a   Chen, K J ^a   Lau, Kei May ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

AlGaN GaN; Breakdown; Cutoff frequency; Grooved sapphire substrate; HEMT; Leakage current; Mixed dislocation; Power added efficiency (PAE)

Indexed keywords

CRYSTALLINE MATERIALS; DISLOCATIONS (CRYSTALS); ELECTRIC BREAKDOWN; GALLIUM NITRIDE; LEAKAGE CURRENTS; REACTIVE ION ETCHING; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SUBSTRATES; TRANSCONDUCTANCE;

ALUMINUM GALLIUM NITRIDE; CRYSTALLINE QUALITY; GROOVED SAPPHIRE SUBSTRATES; INDUCTIVELY COUPLED-PLASMA REACTIVE ION ETCHING; MIXED DISLOCATION; POWER GAIN CUTOFF FREQUENCIES; POWER-ADDED EFFICIENCY (PAE);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 29244470295     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.859675     Document Type: Article

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